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Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annea
  • ISSN号：1041-1135
  • 期刊名称：IEEE Photonics Technology Letters
  • 时间：2012.9.9
  • 页码：1478-1480
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Xue, Jun Jun|Chen, Dunjun|Liu, Yanli|Liu, Bin|Lu, Hai|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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