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中文摘要：
用脉冲激光沉积法（PLD）先在600℃的Si（111）衬底上沉积ZnO薄膜,然后用磁控溅射法再沉积GaN薄膜。直接沉积得到的GaN薄膜是非晶结构,将样品在氨气氛围中在850、900、950℃下退火15min得到结晶的GaN薄膜。用X射线衍射（XRD）、傅立叶红外吸收谱（FTIR）、光致发光谱（PL）和扫描电子显微镜（SEM）研究了ZnO缓冲层对GaN薄膜的结晶和形貌的影响。
英文摘要：
ZnO thin films were first deposited on n-Si（111） at substrate temperatures of 600℃ by PLD.Then GaN thin films were grown on ZnO/Si by R.F.magnetron sputtering system.The as-deposited GaN films were amorphous.Crystalline GaN films were prepared when the samples were annealed in NH3 ambient at 850,900 and 950℃ for 15min.X-ray diffraction（XRD）,Fourier transform infrared spectrophotometer（FTIR）,photoluminescence（PL） and scanning electron microscope（SEM） were used to analyze the effects of the ZnO buffer layer on the crystallization and morphology of GaN thin films.
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