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中文摘要：
以醇酸镓Ga（OC2H5）3作前驱体，利用溶胶-凝胶法和高温氨化法相结合，成功的合成了GaN粉末。用X射线衍射（XRD）、扫描电子显微镜（SEM）、选择区电子衍射（SAED）、光致发光谱（PL）对粉末的结构、形貌和发光特性进行了表征。结果表明：在950℃时，可以得到纯度较高的GaN粉末且采用该工艺合成的GaN粉末粒度较均匀，生成的GaN多晶絮状颗粒为六方纤锌矿结构，室温下光致发光谱的测试结果发现了较强的402nm处的近带边发光峰和460nm处的蓝色发光峰。
英文摘要：
A novel hut efficient method was applied to prepare Gallium nitride （GaN） powder, In this method, hexagonal gallium nitride （GaN） powders were successfully synthesized by means of a combination of Sol-gel process and high -temperature ammoniating using Ga（OC2H5）3 as a new precursor, The powder structure, surface morphology and optical properties were characterized by x-ray diffraction （XRD）, scanning electron microscopy （SEM）, selected area electron diffraction（SAED） and photoluminescence （PL） in this study, The results indicated that the high purity of GaN powder with a homogenous granularity could be obtained at 950℃ by this method. The multi.crystalline and cotton GaN particles were in hexagonal wurtzite structure. The of PL spectra result measured at room temperature showed a strong near-band luminescence peak centered at 402 nm and a blue luminescence peak centered at 460nm.
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