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中文摘要：
利用射频磁控溅射法在Si（111）衬底上先溅射Mo中间层，再溅射Ga2O3薄膜，然后在氨气中退火合成了大量的一维棒状β—Ga2O3。X射线衍射、选区电子衍射和能量弥散谱的分析结果表明，制备的样品为B—Ga2O3。利用扫描电子显微镜和高分辨透射电子显微镜观察发现，合成的棒具有直而光滑的表面，其直径在70～200nm左右。室温光致发光谱显示出两个较强的蓝光发射。另外，简单讨论棒状β—Ga2O3的生长机制。
英文摘要：
β-Ga2O3 nanorods were successfully prepared on Si（111） substrate through annealing Ga2O3/Mo films deposited by radio frequency magnetron sputtering system under flowing ammonia. The synthesized nanorods were confirmed as Ga2O3 with monoclinic structure by X-ray diffraction, selected-area electron diffraction and energy dispersive spectroscopy. Scanning electron microscopy and transmission electron microscopy revealed that the grown β-Ga2O3 nanorods have a straight and smooth surface with diameters ranging from 70-200nm and lengths typically up to several micrometers. The representative photoluminescence spectrum at room tempera- ture exhibited two strong blue-light peaks. Furthermore, the growth mechaninism is discussed briefly.
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