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中文摘要：
利用射频磁控技术，在Si衬底上以Pd为缓冲层、Ga2O3粉末作为生长GaN的Ga源，成功制备出大量GaN纳米线。通过扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜观察分析得出GaN纳米线为单晶结构，纳米线的直径为10～60nm，长度达几十个微米。X射线衍射和X射线能量散射谱显示合成的纳米线为GaN单晶结构。傅里叶变换红外吸收光谱和光致发光光谱测试表明，制得的GaN纳米线与GaN体材料相比具有不同的光学特性。
英文摘要：
Single crystalline wurzite GaN nanowires were successfully synthesized on the Pd catalyzed Si substrate through RF magnetron sputtering deposition method. The Ga2O3 powder was used as the source material of Ga for synthesizing GaN nanowires. Observations by using seanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy show that the GaN nanowire is a single-crystal structure. The diameter of the nanowires is in the range of 10 - 60 nm with the lengths up to several tens of micrometers. Studies by using X-ray diffraction spectroscopy and energy dispersive X-ray spectrum indicate that the nanowires are the hexagonal GaN. The results of Fourier transform infrared spectroscopy and PL spectra show that the optical property of the GaN nanowires is different from those of the bulk GaN.
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