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中文摘要：
采用射频磁控溅射工艺在预沉积和预沉积后再分布的扩镓Si基上溅射Ga2O3薄膜氮化反应组装GaN薄膜。用红外透射谱（mR）、X射线衍射（XRD）、扫描电镜（SEM）、选区电子衍射（SAED）和荧光光谱（PL）对样品进行组成、结构、形貌和发光特性的分析。测试结果表明：采用此方法得到六方纤锌矿结构的GaN薄膜。同时显示预沉积的扩镓硅基较预沉积后再分布的扩镓硅基更适合GaN薄膜的生长。
英文摘要：
Gallium nitride thin films have been successfully grown on the pre-deposition and re-distribution after Ga-predeposited of the Ga-diffused Si （111 ） substrates through nitriding Ga203 thin films deposited by r. f. magnetron sputtering. Fourier Transform Infrared transmission （FTIR） Spectroscopy, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, selected area electron diffraction （SAED） and photoluminescence （PL） were employed to analyze the component, structure, surface morphology and optical properties of the synthesized samples. The results reveal that the as-grown films are hexagonal GaN. In addition, the results indicate high quality GaN films were obtained on the pre-deposition Ga-diffused Si substrates other than the reistribution after Ga-predeposited Ga-diffused Si substrates.
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