欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
本文利用六甲基乙硅氧烷（HMDSO）和氧气（O2）为反应气体，利用微波电子回旋共振-射频双等离子体化学气相沉积法沉积氧化硅薄膜，并利用发射光谱对等离子体特性进行原位诊断.研究表明，RF偏压对氧化硅薄膜沉积速率和薄膜中的化学键结构产生有意义的影响.小的直流自偏压会略微提高沉积速率；但随着直流自偏压的增加，离子轰击效应及刻蚀作用加强，薄膜的沉积速率下降.在13.56 MHz和400 kHz两个不同射频频率条件下所沉积的薄膜中，O和Si的比例基本相同，均超过2∶1；但400 kHz射频偏压下薄膜中的碳成分比例比13.56 MHz条件下的要高得多.这可以归因为高的射频偏压的应用不仅可增强离子轰击效应,而且与体等离子体相互作用,使高活性的氧原子增多；而低频偏压的作用主要是增强离子轰击效应.
英文摘要：
Silicon oxide films were deposited in electron cyclotron resonance-radio frequency dual hybrid plasmas using a mixture of HMDSO and oxygen as source gases, and optical emission spectroscopy was employed to investigate the gas phase species in the plasma. It is found that both the deposition rate and the chemical bonds of films are significantly affected by the radio frequency bias. The deposition rate is slightly increased when a low direct current self-bias is applied, and is reduced with the increasing self-bias due to strengthened ion bombardment. The ratios of O to Si in the films deposited under the bias frequency of 400 kHz are above 2∶1, nearly the same as that under 13.56 MHz. However, the content of carbon under 400 kHz bias is much higher than that under 13.56 MHz. The reason is that the application of the high frequency bias of 13.56 MHz not only strengthens ion bombardment on the material surface, but also induces the variations of the bulk plasmas including the increase of O atom density, while the main effect of the bias of 400 kHz is only to strengthen ion bombardment.
同期刊论文项目
同项目期刊论文
E?ect of Low-frequency Power on F, CF2 Relative Density and F/CF2 Ratio in Fluorocarbon Dual-Frequen
Effect of C:F Deposition on Etching of SiCOH Low-k Films in CHF3 60 MHz/2 MHz Dual-Frequency Capacit
Effect of high-frequency on etching of SiCOH films in CHF3 dual-frequency capacitively coupled plasm
Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemica
Experimental investigation of ion energy distributions in a dual frequency capacitively coupled Ar/C
Fluid simulation for influence of metastable atoms on the characteristics of capacitively coupled ar
Implicit and electrostatic particle-in-cell/Monte Carlo model in two-dimensional and axisymmetric ge
Effect of bias in patterning diamond by a dual electron cyclotron resonance–radio-frequency oxygen p
Effects of matching network on the hysteresis during E and H mode transitions in argon inductively c
The parameters of electron cyclotron resonance/radio-frequency hybrid hydrogen plasma adjusted by su
Frequency Matching Effects on Characteristics of Bulk Plasmas and Sheaths for Dual-Frequency Capacit
Modulating effects of the low-frequency source on ion energy distributions in a dual frequency capac
One-Dimensional Fluid Model for Dust Particles in Dual-Frequency Capacitively Coupled Silane Dischar
Spectroscopic study on rotational and vibrational temperature of N2 and N2 + in dual-frequency capac
Response to “Comment on ‘Influence of exciting frequency on gas and ion rotational temperatures of n
Parallelization and optimization of electrostatic Particle-in-Cell/Monte-Carlo Coupled codes as appl
Numerical results for the Ar and CF4 mixture gas in a dual frequency capacitively coupled plasma usi
Influence of the low-frequency source parameters on the plasma characteristics in a dual frequency c
The influence of Exciting Frequency on N2 and N+2 Vibrational Temperature of Nitrogen Capacitively C
Numerical investigation of ion energy distribution and ion angle distribution in a dual-frequency ca
Effect of substrate facets on homoepitaxial growth of diamonds during plasma-assisted hot filament c
Two-dimensional fluid model of pulse sheath in plasma immersion ion implantation with dielectric sub
期刊信息
位置：