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Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si su
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2013
  • 页码：115-118
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Dongfeng Qi, Hanhui Liu, Songyan Chen, Cheng Li,|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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