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Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer
ISSN号:0150-536X
期刊名称:Journal of Optics
时间:2013.7.10
页码:1-6
相关项目:硅基锗材料外延及其相关器件基础研究
作者:
Ym Li|BW Cheng|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141
会议论文 16
同项目期刊论文
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Growth and Properties of Ultra Thin GeO2 by Rapid Thermal Oxidation
Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate
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Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates
A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1?xGex Epilaye
Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity
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Design of waveguide integrated Ge-quantum-well electro-absorption modulators
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Texture Evolution and Grain Competition in NiGe Film on Ge(001)
Asymmetric light reflectance effect in AAO on glass
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Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation d
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Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge nþ/p Diode Achieved by Implan
Propeties and mechanism analysis of metal/Ge ohmic contact
Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
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The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate
Ge-on-Si for Si-based integrated materials and photonic devices
The optical property of tensile-strained n-type doped Ge
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Detection and analysis of residual strain of epitaxial Ge films on Si substrates
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Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-
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Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-si
Influence of the hydrogen implantation power density on ion cutting of Ge
Characterization of Ge/Si0.16Ge0.84 multiple quantum wells on Ge- on- Si virtual substrateusingpiezo
Ge Nanodots Orgnization on Si Substrates Patterned by ECL Method
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Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal a
Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization
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High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
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Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
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硅基硒纳米颗粒的发光特性研究
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Research progress of Si-based germanium materials and devices
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Ge/SiGe异质结构肖特基源漏MOSFET
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