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Desgin and experiment of Si-based Ge/SiGe type-I quantum well structures
  • 期刊名称：J. optoelectronics. Laser
  • 时间：2012.5.1
  • 页码：922-927
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Chen chengzhao|Chen Yanghua|Huang shihao|Li Cheng*|Lai Hongkai|Chen Songyan|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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