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Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2012.5
  • 页码：634-636
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Wang, Qiming|Xue, Chunlai|Cheng, Buwen|Yeo, Yee-Chia|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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