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Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness
  • 期刊名称：IEEE. Tran. Electron Devices
  • 时间：2012.5.1
  • 页码：1328-1331
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Zheng Wu|Wei Huang|Cheng Li|Hongkai Lai|Songyan Chen|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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