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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge nt/p Diode Achieved by Implantation and
  • ISSN号：1882-0778
  • 期刊名称：Applied Physics Express
  • 时间：2013.9.24
  • 页码：-
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Gu|Songyan Chen|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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