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Growth and Properties of Ultra Thin GeO2 by Rapid Thermal Oxidation
  • 期刊名称：Semiconductor Technology
  • 时间：2012.3.1
  • 页码：201-205
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Lu Changbao|Liu Guanzhou|Li Cheng|Lai Hongkai|Chen Songyan|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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