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Research Progress on Luminous Properties of Si-based Ge Epitaxieal Films
  • ISSN号：1001-5868
  • 期刊名称：半导体光电
  • 时间：2011.6.1
  • 页码：304-308
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： HUANG Shihao, LI Cheng, CHEN Chengzhao, ZHENG Yua|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
同项目期刊论文
Desgin and experiment of Si-based Ge/SiGe type-I quantum well structures
Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrow
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
Growth and Properties of Ultra Thin GeO2 by Rapid Thermal Oxidation
Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer
Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge nt/p Diode Achieved by Implantation and
Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a
Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates
A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1？xGex Epilaye
Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity
Formation of rippled surface morphology during Si/Si(100) epitaxy by ultrahigh vacuum chemical vapou
Design of waveguide integrated Ge-quantum-well electro-absorption modulators
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The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate w
Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-i
Texture Evolution and Grain Competition in NiGe Film on Ge(001)
Asymmetric light reflectance effect in AAO on glass
formation and properties of GOI prepared by cyclic thermal oxidaton and annealing processes
Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation d
Non-homogeneous SiGe-on-insulator formed by germanium condensation process
Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n&thorn;/p Diode Achieved by Implan
Propeties and mechanism analysis of metal/Ge ohmic contact
Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
掺杂对多层Ge/Si(001) 量子点光致发光的影响
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate
Ge-on-Si for Si-based integrated materials and photonic devices
The optical property of tensile-strained n-type doped Ge
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-4
Detection and analysis of residual strain of epitaxial Ge films on Si substrates
Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate
Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-
Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preanneali
Phosphorus diffusion in germanium following implantation and excimer laser annealing
Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-si
Influence of the hydrogen implantation power density on ion cutting of Ge
Characterization　of　Ge/Si0.16Ge0.84 multiple quantum　wells　on　Ge-　on-　Si virtual substrateusingpiezo
Ge Nanodots Orgnization on Si Substrates Patterned by ECL Method
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFET
A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile stra
Si基Ge异质结构发光器件的研究进展
In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high
Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth
Ge(001)衬底上分子束外延生长高质量的Ge_(1-x)Sn_x合金
Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtu
Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal a
Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization
Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template
High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge
Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics
Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si su
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Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness
Enhanced thermal stability of Au@Pt nanoparticles by tuning shell thickness: Insights from atomistic
Improvement of performance of Si-based Ge PIN photodetectors with Al/TaN electrode for n-type Ge con
基于Franz-Keldysh效应的倏逝波锗硅电吸收调制器设计
Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
Self-mask fabrication of uniform orientated SiGe island/SiGe/Si hetero-nanowire arrays with controll
Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structure
Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2
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Properties of ultra-thin SiGe- on- insulator materials prepared by Ge condensation method
Lattice constant deviation from Vegard';s law in GeSn alloys
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth
GeSn合金的晶格常数对Vegard定律的偏离
The impact of polishing on germanium-on-insulator substrates
Si基外延Ge薄膜中残余应变的检测与分析
硅基硒纳米颗粒的发光特性研究
金属与半导体Ge欧姆接触制备、性质及其机理分析
硅基低位错密度厚锗外延层的UHV/CVD法生长
采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能
Si（001）衬底上分子束外延生长Ge_（0.975）Sn_（0.025）合金薄膜
Si（100）表面Se薄膜生长及其在Ti/Si欧姆接触中的应用
循环氧化／退火制备GeOI薄膜材料及其性质研究
N型掺杂应变Ge发光性质
Research progress of Si-based germanium materials and devices
Si基Ge/SiGeⅠ型量子阱结构的理论设计和实验研究
快速热氧化制备超薄GeO2及其性质
合金条件对Al/n~＋-Ge欧姆接触的影响
Ge／SiGe异质结构肖特基源漏MOSFET
用于锂离子电池负极的多孔硅材料制备
图形化Si基Ge薄膜热应变的有限元分析
铝分层诱导晶化非晶硅的研究
硅纳米图形诱导生长分布均匀的锗纳米岛
Si基Ⅳ族异质结构发光器件的研究进展
掺杂对多层Ge／Si（001）量子点光致发光的影响
Ge（001）衬底上分子束外延生长高质量的Ge1-x Snx合金
基于Franz—Keldysh效应的倏逝波锗硅电吸收调制器设计
Ge-on-Si for Si-based integrated materials and photonic devices
期刊信息
  • 《半导体光电》
  • 中国科技核心期刊
  • 主管单位:信息产业部
  • 主办单位:中国电子科技集团公司第四十四研究所（重庆光电技术研究所）
  • 主编：江永清
  • 地址：重庆市南岸区南坪花园路14号
  • 邮编：400060
  • 邮箱：soe@163.net
  • 电话：023-65860286
  • 国际标准刊号：ISSN：1001-5868
  • 国内统一刊号：ISSN：50-1092/TN
  • 邮发代号:
  • 获奖情况:
  • 重庆市首届十佳期刊称号，1999年,信息产业部1999-2000年度优秀电子期刊称号
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:5924