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Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preanneali
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2014.9.1
  • 页码：3060-3065
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Chen Wang, Cheng Li, Guangyang Lin, Weifang Lu, J|Miao Zhang|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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