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A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1？xGex Epilaye
  • 期刊名称：IEEE. Tran. Electron Devices
  • 时间：2012.9.1
  • 页码：2438-2443
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Mengrao Tang|Cheng Li|Zheng Wu|Guanzhou Liu|Wei Huang|Hongkai Lai|Songyan Chen|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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