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The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate w
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2014.6.18
  • 页码：241605-
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Po-Hung Wu, Ying-Sheng Huang, Hung-Pin Hsu, Cheng|Kwong-Kau Tiong|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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