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Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge
  • 期刊名称：IEEE Trans. Electron. Devices
  • 时间：2013
  • 页码：3741-3745
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Ruan, Yujiao, Chengzhao Chen, Shihao Huang,|Wei Huang, Songyan Chen, Cheng Li, and Jun Li|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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