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Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation d
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：2011.10.23
  • 页码：2818-2821
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Chengzhao Chen, Linghong Liao, Cheng Li*, Hongkai|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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