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中文摘要：
研究了Si衬底上外延Ge薄膜中的应变。在超高真空化学气相沉积系统中生长Ge薄膜，采用高精度X射线衍射（XRD）和拉曼散射光谱检测薄膜的组份和应变。结果表明，外延薄膜的组份为纯Ge，没有Si的扩散；Ge薄膜中存在少量应变。Ge薄膜XRD峰位和拉曼散射峰位的偏移是由残余应变引起的。定量计算了热膨胀失配引人的张应变和晶格失配引入的压应变与Ge薄膜生长参数的关系，张应变随着生长温度的升高而近似线性增加，压应变随着生长厚度的增加按反比例减小，Ge薄膜最终应变状态由两者共同决定。理论计算值与实验结果吻合良好。
英文摘要：
Epitaxial Ge films on Si substrates grown by ultrahigh vacuum chemical vapor deposition （UH- VCVD） have been characterized by means of high-resolution X ray diffraction （XRD） and Raman scat-tering techniques in order to investigate the Ge content and residual strain. The results show that the epitaxial film is pure Ge without any Si out-diffusion,but the film is under a small amount of strain. The residual strain leads to the shifts of the diffraction and scattering peaks of the epitaxial Ge films compared with the bulk Ge. The tensile strain due to the difference of thermal expansion coefficients and the compressive strain because of the lattice mismatch are theoretically calculated. The tensile strain increases almost linearly with increasing growth temperature, while the compressive strain decreases inversely with increasing growth thickness. The final strain state of the epitaxial Ge film is determined by these two factors. The measured and simulated strains agree well with each other.
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