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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-4
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2013.3
  • 页码：339-341
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Zhang, Zheng|Tok, Eng Soon|Antoniadis, Dimitri|Yeo, Yee-Chia|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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