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Formation of rippled surface morphology during Si/Si(100) epitaxy by ultrahigh vacuum chemical vapou
  • 期刊名称：Chinese Physics B
  • 时间：2011.1.1
  • 页码：126801-
  • 相关项目：硅基锗材料外延及其相关器件基础研究
作者： Hu Wei-Xuan|Cheng Bu-Wen| Xue Chun-Lai, Su Shao-Jian, and Wang Qi-Ming|
同期刊论文项目
硅基锗材料外延及其相关器件基础研究
期刊论文 141 会议论文 16
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