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中文摘要：
使用低、高温两步法生长的高质量Ge薄膜作为缓冲层,在Si（001）衬底上采用分子束外延法生长出Ge0.975Sn0.025合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明,Ge0.975Sn0.025合金薄膜具有很好的晶体质量,并且没有发生Sn表面分凝.另外,Ge0.975Sn0.025合金薄膜在500℃下具有很好的热稳定性,有望在Si基光电器件中得到应用.
英文摘要：
Ge0. 975 Sn0. 025 alloy films have been grown on Si（001） substrates by molecular beam epitaxy with high-quality Ge films as buffer layers. The alloys have high crystalline quality without Sn surface segregation,determined by double crystal X-ray diffraction and Rutherford backscattering spectra measurement. In addition,the Ge0. 975Sn0. 025 alloy has rather good thermal stability at 500 ℃ ,which makes it possible to be used in Si-based optoelectronic devices.
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