针对三维集成电路最高层芯片,引入硅通孔面积比例因子r,提出了考虑硅通孔的温度解析模型.Matlab分析表明,在芯片堆叠层数及芯片工作状态相同的情况下,考虑硅通孔之后的芯片温度比未考虑硅通孔时要低;r越大,芯片温度越低;当芯片堆叠层数较多且r较小时,温度随着r的减小急剧上升;对于8层的三维集成电路,硅通孔面积比例因子的最佳范围为0.5%~1%.
With through silicon via (TSV) area scale factor r, integrated circuits (3D IC) taking TSV into account was proposed. an analytical thermal model for top layer of three-dimensional It is shown that temperature is lower after considering TSVs under same working conditions; the greater the scale factor r, the lower the temperature is; For more layers and smaller r, temperature increases sharply with decrease of r; The best range of TSV area ratio factor r is O. 5% to 1% for an 8-layer 3D IC.